Advanced DFT–NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS<sub>2</sub>/WSe<sub>2</sub> van der Waals Heterojunction TFET and WTe<sub>2</sub>/WS<sub>2</sub> Metal/Semiconductor Contact
نویسندگان
چکیده
We present, here, advanced DFT-NEGF techniques that we have implemented in our ATOmistic MOdelling Solver, ATOMOS, to explore transport novel materials and devices particular van-der-Waals heterojunction transistors. describe methodologies using plane-wave DFT, followed by a Wannierization step, linear combination of atomic orbital leads an orthogonal non-orthogonal NEGF model, respectively. then detail implementation including the Sancho-Rubio electron-phonon scattering within framework. also present methodology extract coupling from first principle include them simulations. Finally, apply methods towards exploration 2D devices. This includes material selection Dynamically-Doped FET for ultimately scaled MOSFETS, vdW TFETs, HfS2/WSe2 TFET could achieve high on-current levels, study Schottky-barrier height through metal-semiconducting WTe2/WS2 VDW junction transistor.
منابع مشابه
Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical stacking of two-dimensional crystals, such as graphene and related two-dimensional materials. These layered designer materials are held together by van der Waals f...
متن کاملOne-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport.
Experimental demonstrations of one-dimensional (1D) van der Waals material tellurium (Te) have been presented by Raman spectroscopy under strain and magneto-transport. Raman spectroscopy measurements have been performed under strains along different principle axes. Pronounced strain response along the c-axis is observed due to the strong intrachain covalent bonds, while no strain response is ob...
متن کاملOptimized Atom Interferometer Design Including van der Waals Interactions
The problem of designing an atom interferometer with optimum sensitivity to de Broglie wave phase shifts is revisited. Because van der Waals interactions affect how efficiently material gratings work as beam splitters, we find the optimum open fraction for each of the gratings in a three-grating Mach Zehnder atom interferometer depends on the van der Waals interaction strength as well as the at...
متن کاملMulti-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
Atomically thin two-dimensional semiconductors such as MoS2 hold great promise for electrical, optical and mechanical devices and display novel physical phenomena. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, which has hampered efforts to observe its intrinsic quantum transport behaviours. Potential sources of dis...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2021
ISSN: ['0018-9383', '1557-9646']
DOI: https://doi.org/10.1109/ted.2021.3078412